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Kingston Technology HyperX Impact 8GB 2666MHz DDR4 CL15 260-Pin SODIMM Laptop Memory (HX426S15IB2/8)
- Max out your system memory — Fully load up your notebook or small form factor machine with HyperX Impact DDR4 SODIMM, available in modules from 4GB–16GB and kits of 2 and 4 for capacities up to 64GB
- Plug N Play functionality — HyperX Impact DDR4 automatically overclocks itself so even first-time installers know they’re getting the most from their system
- Intel XMP Ready — HyperX Impact DDR4 is XMP-ready, so setup can be adjusted by selecting one of the hand-tuned profiles, without needing to dig into the BIOS
- Ultra-efficient Impact DDR4 operates at a mere 1.2V, so you’ll get a huge performance boost, your system will run cooler and you’ll squeeze more out of your notebook’s battery
Keep ahead of the curve by fully loading up your notebook or small form factor machine with HyperX Impact DDR4 SODIMM and crank the settings to max. Impact DDR4 is optimized for Intel’s Series 100 and 200 chipsets and has been tested for compatibility with leading motherboard manufacturers. Available in 4GB-16GB modules and kits of 2 and 4 for capacities up to 64GB, it has low CL13, CL14 and CL15 latencies, higher memory bandwidth and speeds up to 2666MHz1 to power through all the gaming, video editing and multitasking you can throw at it. It automatically overclocks itself so that even first-time installers know they’re getting the most from their system. Because it’s XMP-ready, you can fine tune your setup by simply selecting one of the hand-tuned profiles, no need to dig into the BIOS. Ultra-efficient Impact DDR4 operates at a mere 1.2V, so you’ll get a huge performance boost, your system will run cooler and you’ll squeeze more from your notebook’s battery life. The sleek black PCB and slim thermal label will give your build an edge in style, and Impact DDR4 is backed by lifetime warranty.
PNY 8GB DDR4 2666MHz Notebook Memory – (MN8GSD42666)
- Experience of benefits of a PC Memory upgrade with the ability to run more demanding applications simultaneously, and at faster speeds, for a better, smoother, computing experience
- High Performance DDR4 laptop Memory designed for PC enthusiasts and gamers
- Exceptional performance with a frequency Speed of 2666MHz (PC4-21300), and backwards compatible with lower frequencies (2400MHz and 2133MHz)
- Cas latency of 19, 1. 2 Volts
Want to work with the latest memory-intensive applications like graphic design and video-editing tools? Like to keep lots of browser Windows open for work, school, or play? Is your PC having trouble keeping up? A DDR4 2666MHz Memory upgrade from PNY gives you the speed you need to get the most out of your current Windows notebook PC. Pny’s performance line of DDR4 RAM modules is purpose-built for users who want rock-solid reliability and great value. For more than 30 years, PNY has been rigorously sourcing, testing, and manufacturing memory upgrades for thousands of the most popular PC platforms. No matter what you do on your PC, you’ll do it better and faster with a DDR4 2666MHz upgrade from PNY.
Crucial 8GB Single DDR4 2666 MT/s (PC4-21300) SR X8 SODIMM 260-Pin Memory – CT8G4SFS8266
- Speeds up to 3200 MT/s and faster data rates are expected to be available as DDR4 technology matures
- Increase bandwidth by up to 30%
- Reduce power consumption by up to 40% and extend battery life
- Faster burst access speeds for improved sequential data throughput
- Optimized for next generation processors and platforms
CT16G4SFD824A is a 16GB DDR4 Notebook module that operates at speeds up to 2400 MT/s and has a CL17 latency. It is an Buffered SODIMM. It conforms to the industry standard DDR4 SODIMM layout of 260 pins and is compatible with systems that take DDR4 2400MT/s SODIMM memory.
Timetec Hynix IC 8GB DDR4 2666MHz PC4-21300 Unbuffered Non-ECC 1.2V CL19 1Rx8 Single Rank 260 Pin SODIMM Laptop Notebook Computer Memory RAM Module Upgrade (8GB)
- For Selected Alienware , ASRock , ASUS/ASmobile , Biostar , EliteGroup (ECS) , Gigabyte , MSI , QNAP , Shuttle , Supermicro , Tyan Computers
- DDR4 2666MHz PC4-21300 260 Pin Unbuffered Non-ECC 1.2V CL19 Single Rank 1Rx8 based 1024×8
- Power Supply: VDD=1.2V (1.14V to 1.26V) VDDQ = 1.2V (1.14V to 1.26V)
- Module Size: 8GB Package: 1x8GB For Laptop, Not For Desktop
- Guaranteed – Lifetime warranty from Purchase Date Free technical support ([email protected]) MON – FRI 9AM-6PM PST
Samsung M471A1K43CB1-CTD 8GB DDR4 2666MHz Memory Module – Memory Modules (8GB, 1 x 8GB, DDR4, 2666 MHz, 260-Pin SO-DIMM, Black, Green)
- Samsung M471A1K43CB1-CRC. Component for: PC/server.
- Internal memory: 8 GB.
- Memory layout (modules x size): 1 x 8 GB.
- Internal memory type: DDR4.
- Memory frequency: 2666 MHz.
- Memory module type: 260-pin SO-DIMM.
- CAS latency: 19. Product colour: Black,
- green.
Proven DRAM Module Solution in the Global Market
Samsung’s memory modules are designed for a wide range of applications to deliver the best performance with low power requirements.
Key Benefits
- Increase bandwidth by up to 30%
- Reduce power consumption by up to 40% and extend battery life
- Faster burst access speeds for improved sequential data throughput
- Optimized for next generation processors and platforms
TEAMGROUP Elite DDR4 8GB Single 2666MHz (PC4-21300) CL19 Unbuffered Non-ECC 1.2V SODIMM 260-Pin Laptop Notebook PC Computer Memory Module Ram Upgrade – TED48G2666C19-S01 – (1x8GB) Single
TEAMGROUP Elite DDR4 8GB Single 2666MHz (PC4-21300) CL19 SODIMM 260-Pin Laptop Notebook Memory – TED48G2666C19-S01
- All new generation product of DRAM module
- 1.2V memory module
- Massive 32GB Kit
- Lifetime warranty
- Completely compatible with X99 & Skylake chipset
★Perfect choice for laptop users
TEAMGROUP’s ELITE series has released an all-new DDR4 SO-DIMM product which is compliant with JEDEC international standard. With only 1.2V of working voltage, it can save electricity use by 20% compared to its last generation. Therefore, the heat generated from the product itself can also be reduced and maintain the surrounding temperature of the system. It is 100% compatible with INTEL’s latest X99 & Skylake chipset. With selected high-quality IC chips and strict testing standard, it is the perfect choice for laptop users, who seek for excellent quality, optimal performance, stability and compatibility
Specifications
Product Dimensions: 67.6 x 30 mm
CAS Latency: CL19-19-19-43
Data Transfer Bandwidth: DDR4 2666 ; 21,300 MB/Sec (PC4 21300)
Capacity: 8GB
Tested Voltage: 1.2V
Warranty: Lifetime warranty
Samsung 32GB DDR4 2666MHz RAM Memory Module for Laptop Computers (260 Pin SODIMM, 1.2V) M471A4G43MB1
Proven DRAM Module Solution in the Global Market
Samsung’s memory modules are designed for a wide range of applications to deliver the best performance with low power requirements.
- Smaller than normal DIMMs
- Supports x8 / x16 / up to 2 ranks per DIMM and 2DPC configuration
- For systems with limited space issues
- Application: Laptop
G.Skill 16GB 2666MHz DDR4 SO-DIMM Laptop Memory Upgrade Kit (CL19) 1.20V PC4-21300 Ripjaws 2x8GB
- Dual Channel 16GB DDR4 memory upgrade kit for laptop computers – contains 2x 8GB modules
- 2666MHz memory speed, PC4-21300 standard
- Full memory timings of CL19 (19-19-19-43) – 260 pins
- Requires voltage of only 1.20V which means longer battery life
- Features Auto-Overclocking which allows qualified systems to detect the highest available speed and automatically adjust BIOS settings to match
Dual channel 16GB laptop memory kit containing 2x 8GB modules with 260 pins, rated to run at 2666MHz and requires only 1.20V. From the premium G.Skill Ripjaws DDR4 range, which guarantees superb performance at a great price. Memory timings of CL19 (19-19-19-43) and backed by a lifetime warranty.
Crucial 16GB Single DDR4 2400 MT/s (PC4-19200) DR x8 SODIMM 260-Pin Memory – CT16G4SFD824A
- Speeds up to 3200 MT/s and faster data rates are expected to be available as DDR4 technology matures
- Increase bandwidth by up to 30%
- Reduce power consumption by up to 40% and extend battery life
- Faster burst access speeds for improved sequential data throughput
- Optimized for next generation processors and platforms
Conclusion
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